smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SC4332-Z features low collector saturation voltage. fast switching speed. high dc current gain. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7v collector current i c 5a collector current (pulse) * i cp 10 a base current i b 2.5 a total power dissipation p t 1w junction temperature t j 150 storage temperature t stg -55to+150 *pw 10 ms, duty cycle 50% smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors ic transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors h fe classification marking m l k hfe 100 200 150 300 200 400 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to emitter voltage v ceo(sus) i c =3.0a,i b =0.3a,l=1mh 60 v collector to emitter voltage v cex(sus) i c =3.0a,i b1 =-i b2 =0.3a,v be(off) =-1.5 v, l = 180 h, 60 v collector cut-off current i cbo v ce =60v,i e =0 10 a collector cut-off current i cer v ce =60v,r be =51,t a = 125 c1.0ma collector cut-off current i cex1 v ce =60v,v be(off) = -1.5 v 10 a collector cut-off current i cex2 v ce =60v,v be(off) =-1.5v,t a = 125 1.0 ma emitter cut-off current i ebo v eb =5.0v,i c =0 10 a dc current gain h fe1 v ce =2.0v,i c =0.5a 100 dc current gain h fe2 v ce =2.0v,i c =1.0a 100 400 dc current gain h fe3 v ce =2.0v,i c =3.0a 60 collector saturation voltage v ce(sat)1 i c =3.0a,i b =0.15a 0.3 v collector saturation voltage v ce(sat)2 i c =4.0a,i b = 0.2 a 0.5 v base saturation voltage v be(sat)1 i c =3.0a,i b =0.15a 1.2 v base saturation voltage v be(sat)2 i c =4.0a,i b = 0.2 a 1.5 v collector capacitance c ob v cb =10v,i e = 0, f = 1.0 mhz 130 pf gain bandwidth product f t v ce =10v,i e = -0.5 a 150 mhz turn-on time t on i c =3.0a,r l = 16.7, 0.3 s storage time t stg i b1 =-i b2 =0.15a,v cc =50 v 1.5 s fall time t f 0.3 s smd type transistors 2SC4332-Z smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors ic transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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